LOGO
LOGO
BC849CWE6327 Image

img for reference only

Mfr. #:
BC849CWE6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type NPN
Collector Current (Ic) 100mA
Collector-Emitter Breakdown Voltage (Vceo) 30V
Power (Pd) 250mW
DC Current Gain (hFE@Ic,Vce) 420@2mA,5V
Characteristic Frequency (fT) 250MHz
Collector Cutoff Current (Icbo) 15nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA
Operating Temperature -
Related models
  • IPB80N04S404ATMA1

    Surface mount N channel 40 V 80A (Tc) 71W (Tc) PG-TO263-3-2

  • IRFU3910PBF

    Through hole N channel 100 V 16A (Tc) 79W (Tc) IPAK (TO-251AA)

  • BSO130P03SHXUMA1

    Surface mount type P channel 30 V 9.2A (Ta) 1.56W (Ta) PG-DSO-8

  • IPD90N04S404ATMA1

    Surface mount N channel 40 V 90A (Tc) 71W (Tc) PG-TO252-3-313

  • IPD90N04S4L04ATMA1

    Surface mount N channel 40 V 90A (Tc) 71W (Tc) PG-TO252-3-313

  • BSZ040N04LSGATMA1

    Surface mount N-channel 40 V 18A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) PG-TSDSON-8

  • IPB090N06N3GATMA1

    Surface mount N channel 60 V 50A (Tc) 71W (Tc) PG-TO263-3

  • IPD80R1K2P7ATMA1

    Surface mount N channel 800 V 4.5A (Tc) 37W (Tc) PG-TO252-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd