LOGO
LOGO
BCP54E6327 Image

img for reference only

Mfr. #:
BCP54E6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type NPN
Collector Current(Ic) 1A
Collector-Emitter Breakdown Voltage(Vceo) 45V
Power(Pd) 2W
DC Current Gain(hFE@Ic,Vce) 40@150mA,2V
Characteristic Frequency(fT) 100MHz
Collector Cutoff Current(Icbo) 100nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 500mV@500mA,50mA
Operating Temperature -
Related models
  • IRFB4127PBF

    Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB

  • IRFB4137PBF

    Transistor: N-MOSFET; unipolar; 300V; 38A; 341W; TO220AB

  • IRFB4227PBF

    Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB

  • IRFB4228PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

  • IRFB4229PBF

    Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB

  • IRFB4310PBF

    Transistor: N-MOSFET; unipolar; 100V; 140A; 330W; TO220AB

  • IRFB4310ZPBF

    Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; TO220AB

  • IRFB4321PBF

    Transistor: N-MOSFET; unipolar; 150V; 83A; 330W; TO220AB

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd