LOGO
LOGO
BC846UE6327HTSA1 Image

img for reference only

Mfr. #:
BC846UE6327HTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type NPN
Collector Current (Ic) 100mA
Collector-Emitter Breakdown Voltage (Vceo) 65V
Power (Pd) 250mW
DC Current Gain (hFE@Ic,Vce) 200@2mA,5V
Characteristic Frequency (fT) 250MHz
Collector Cutoff Current (Icbo) 15nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 600mV@100mA,5mA
Operating Temperature -
Related models
  • IRFIZ34NPBF

    Single N-Channel 100 V 37 W 34 nC Power Mosfet Flange Mount - TO-220FPAK

  • IRFI3205PBF

    Single N-Channel 55 V 63 W 170 nC Power Mosfet Flange Mount - TO-220FPAK

  • IRF5305PBF

    Single P-Channel 55 V 110 W 63 nC Hexfet Power Mosfet Flange Mount - TO-220AB

  • BCR191E6327HTSA1

    PNP Silicon Digital Transistor, SOT23

  • IPN50R3K0CEATMA1

    Single N-Channel 550 V 3 Ohm 4.3 nC CoolMOS? Power MOSFET - SOT-223

  • IPT015N10N5ATMA1

    100V, 300A, 1.5MOHM, HSOF

  • IRF5803TRPBF

    Single P-Channel 40 V 2 W 25 nC Hexfet Power Mosfet Surface Mount - TSOP-6

  • IRFR120ZTRPBF

    MOSFET 100 V 8.7A 190 mOhm 6.9 nC Qg D-Pak

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd