LOGO
LOGO
SMBT3906E6327HTSA1 Image

img for reference only

Mfr. #:
SMBT3906E6327HTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Biode (BJT)
Transistor Type PNP
Collector Current (Ic) 200mA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Power (Pd) 330mW
DC Current Gain (hFE@Ic,Vce) 100@10mA,1V
Characteristic Frequency (fT) 250MHz
Collector Cutoff Current (Icbo) 50nA
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 400mV@50mA,5mA
Operating Temperature -
Related models
  • AUIRFS4115-7TRL

    Surface Mount N Channel 150 V 105A (Tc) 380W (Tc) D2PAK (7-Lead)

  • IRFB7746PBF

    Through hole N channel 75 V 59A (Tc) 99W (Tc) TO-220AB

  • IRFSL7787PBF

    Through Hole N Channel 75 V 76A (Tc) 125W (Tc) TO-262

  • IRFI7536GPBF

    Through hole N channel 60 V 86A (Tc) 75W (Tc) TO-220 full package

  • IRL6283MTRPBF

    Surface Mount N Channel 20 V 38A (Ta), 211A (Tc) 2.1W (Ta), 63W (Tc) DIRECTFET? MD

  • IRFI7440GPBF

    Through hole N channel 40 V 95A (Tc) 42W (Tc) TO-220AB whole package

  • IRFI7446GPBF

    Through hole N channel 40 V 80A (Tc) 40.5W (Tc) TO-220AB whole package

  • IR3082MPBF

    Processor PMIC 20-MLPQ (5x5)

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd