IRFB33N15D Infineon | Infineon agency

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Mfr. #：

IRFB33N15D

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 150 V 33A (Tc) 3.8W (Ta), 170W (Tc) TO-220AB

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	150 V
Current at 25°C - Continuous Drain (Id)	33A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	56 mOhm @ 20A, 10V
Vgs(th) (max) at Id	5.5V @ 250μA
Gate Charge?(Qg) (max) at Vgs	90 nC @ 10 V
Vgs (max)	±30V
Various Vds Input Capacitance (Ciss) (Max)	2020 pF @ 25 V
FET Function	-
Power Dissipation (Max)	3.8W (Ta), 170W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

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