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IRF9520NS Image

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Mfr. #:
IRF9520NS
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 100 V 6.8A (Tc) 3.8W (Ta), 48W (Tc) D2PAK
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 6.8A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 480 mOhm @ 4A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 27 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 350 pF @ 25 V
FET Function -
Power Dissipation (max) 3.8W (Ta), 48W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
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