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IGW75N65H5XKSA1 Image

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Mfr. #:
IGW75N65H5XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
1
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type -
Collector-emitter breakdown voltage (Vces) 650V
Collector current (Ic) 120A
Power (Pd) 395W
Gate threshold voltage (Vge(th)@Ic) 2.1V@15V,75A
Gate charge (Qg@Ic,Vge) 160nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) 28ns
Turn-off delay time (Td(off)) 174ns
Conduction loss (Eon) 2.25mJ
Turn-off loss (Eoff) 0.95mJ
Operating temperature -40℃~ 175℃@(Tj)
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