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DF650R17IE4BOSA1 Image

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Mfr. #:
DF650R17IE4BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type -
Collector-emitter breakdown voltage (Vces) 1.7kV
Collector current (Ic) 930A
Power (Pd) 4.15kW
Gate threshold voltage (Vge(th)@Ic) 2.45V@15V,650A
Input capacitance (Cies@Vce) 54nF@25V
Operating temperature -40℃~ 150℃
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