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IGB03N120H2ATMA1 Image

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Mfr. #:
IGB03N120H2ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type -
Collector-emitter breakdown voltage (Vces) 1.2kV
Collector current (Ic) 9.6A
Power (Pd) 62.5W
Gate threshold voltage (Vge(th)@Ic) 2.8V@15V,3A
Gate charge (Qg@Ic,Vge) 22nC
Turn-on delay time (Td(on)) 9.2ns
Turn-off delay time (Td(off)) 281ns
Operating temperature -40℃~ 150℃@(Tj)
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