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IGP10N60TATMA1 Image

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Mfr. #:
IGP10N60TATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type NPT(non-punch-through);FS(field stop)
Collector-emitter breakdown voltage(Vces) 600V
Collector current(Ic) 24A
Power(Pd) 110W
Gate threshold voltage(Vge(th)@Ic) 2.05V@15V,10A
Gate charge(Qg@Ic,Vge) 62nC
Input capacitance(Cies@Vce) -
Turn-on delay time(Td(on)) 12ns
Turn-off delay time(Td(off)) 215ns
Conduction loss(Eon) 0.16mJ
Turn-off loss(Eoff) 0.27mJ
Operating temperature -
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