LOGO
LOGO
IRG4PC30UDPBF-IR Image

img for reference only

Mfr. #:
IRG4PC30UDPBF-IR
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type -
Collector-emitter breakdown voltage (Vces) 600V
Collector current (Ic) 23A
Power (Pd) 100W
Gate threshold voltage (Vge(th)@Ic) -
Input capacitance (Cies@Vce) -
Conduction loss (Eon) 0.38mJ
Turn-off loss (Eoff) 0.16mJ
Reverse recovery time (Trr) 42ns
Operating temperature -55℃~ 150℃@(Tj)
Related models
  • IDW30G120C5BFKSA1

    Diode, SiC Schottky, thinQ 5G 1200V, Dual Common Cathode, 1.2 kV, 87 A, 154 nC, TO-247

  • IDW30G65C5XKSA1

    Diode, SiC Schottky, thinQ, single, 650 V, 30 A, 42 nC, TO-247

  • IDK10G65C5XTMA2

    Diode, SiC Schottky, thinQ Gen V, Single, 650 V, 10 A, 15 nC, TO-263 (D2PAK)

  • IDW40G65C5BXKSA2

    Diode, SiC Schottky, thinQ Gen V, Dual Common Cathode, 650 V, 20 A, 29 nC, TO-247

  • IDL04G65C5XUMA2

    Diode, SiC Schottky, thinQ Gen V, Single, 650 V, 4 A, 7 nC, VSON

  • IDW20G65C5BXKSA2

    Diode, SiC Schottky, thinQ Gen V, Dual Common Cathode, 650 V, 10 A, 15 nC, TO-247

  • IDH02G65C5XKSA2

    Diode, SiC Schottky, thinQ Gen V, Single, 650 V, 2 A, 4 nC, TO-220

  • BAR66E6327HTSA1

    Diode, RF/PIN, Dual Series, 1.8 ohm, 150 V, SOT-23, 3-pin, 0.9 pF

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd