LOGO
LOGO
SGB15N120ATMA1 Image

img for reference only

Mfr. #:
SGB15N120ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type NPT(non-punch-through)
Collector-emitter breakdown voltage(Vces) 1.2kV
Collector current(Ic) 30A
Power(Pd) 198W
Gate threshold voltage(Vge(th)@Ic) 3.6V@15V,15A
Gate charge(Qg@Ic,Vge) 130nC
Turn-on delay time(Td(on)) 18ns
Turn-off delay time(Td(off)) 580ns
Conduction loss(Eon) 1.9mJ
Turn-off loss(Eoff) 1.9mJ
Operating temperature -55℃~ 150℃@(Tj)
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd