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IRGSL4B60KD1PBF Image

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Mfr. #:
IRGSL4B60KD1PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type NPT(Non-Punch-Through)
Collector-Emitter Breakdown Voltage(Vces) 600V
Collector Current(Ic) 11A
Power(Pd) 63W
Gate Threshold Voltage(Vge(th)@Ic) 2.5V@15V,4A
Gate Charge(Qg@Ic,Vge) 12nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) 22ns
Turn-off delay time (Td(off)) 100ns
Conduction loss (Eon) 0.073mJ
Turn-off loss (Eoff) 0.047mJ
Reverse recovery time (Trr) 93ns
Operating temperature -55℃~ 175℃@(Tj)
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