LOGO
LOGO
IRGR4045DTRPBF Image

img for reference only

Mfr. #:
IRGR4045DTRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type -
Collector-Emitter Breakdown Voltage (Vces) 600V
Collector Current (Ic) 12A
Power (Pd) 77W
Gate Threshold Voltage (Vge(th)@Ic) 2V@15V,6A
Gate Charge (Qg@Ic,Vge) 19.5nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) 27ns
Turn-off delay time (Td(off)) 75ns
Conduction loss (Eon) 0.056mJ
Turn-off loss (Eoff) 0.122mJ
Reverse recovery time (Trr) 74ns
Operating temperature -55℃~ 175℃@(Tj)
Related models
  • FP15R06W1E3_B11

    Infineon IGBT Module N-channel, Common Collector, 22 A, Vce=600 V, 23-pin EASY1B package

  • FF200R12KS4HOSA1

    Infineon IGBT module, max 1200 V, max 275 A

  • BAL99E6327HTSA1

    Infineon single switching diode, Iout=250mA, SMD mount, Vrev=80V, SOT-23 package

  • IDW80C65D2XKSA1

    Infineon single diode, Iout=80A, through hole mounting, Vrev=650V, TO-247 package

  • IDW80C65D1XKSA1

    Infineon single diode, Iout=80A, through hole mounting, Vrev=650V, TO-247 package

  • FS450R12OE4BOSA1

    Infineon IGBT module, max 1200 V, max 450 A

  • IRG4BC40W-LPBF

    Infineon IGBT, max. 600 V, max. 40 A

  • FP75R07N2E4B11BOSA1

    Infineon IGBT Module N-channel, 3-phase bridge, 75 A, Vce=650 V, 31-pin ECONO2 package

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd