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F4150R12KS4BOSA1 Image

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Mfr. #:
F4150R12KS4BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type -
Collector-Emitter Breakdown Voltage (Vces) 1.2kV
Collector Current (Ic) 180A
Power (Pd) 960W
Gate Threshold Voltage (Vge(th)@Ic) 3.75V@15V,150A
Input Capacitance (Cies@Vce) 10nF@25V
Operating Temperature -40℃~ 125℃
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