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FZ1000R33HE3C1NOSA1 Image

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Mfr. #:
FZ1000R33HE3C1NOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type FS(field stop)
Collector-emitter breakdown voltage(Vces) 3.3kV
Collector current(Ic) 1kA
Power(Pd) 1600kW
Gate threshold voltage(Vge(th)@Ic) 3.1V@15V,1kA
Input capacitance(Cies@Vce) 190nF@25V
Operating temperature -40℃~ 150℃@(Tj)
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