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IKZ75N65ES5XKSA1 Image

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Mfr. #:
IKZ75N65ES5XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT Tube/Module
IGBT Type -
Collector-Emitter Breakdown Voltage (Vces) 650V
Collector Current (Ic) 80A
Power (Pd) 395W
Gate Threshold Voltage (Vge(th)@Ic) 1.75V@15V,75A
Gate Charge (Qg@Ic,Vge) 164nC
Input capacitance (Cies@Vce) -
Turn-on delay time (Td(on)) 46ns
Turn-off delay time (Td(off)) 405ns
Conduction loss (Eon) 1.3mJ
Turn-off loss (Eoff) 1.5mJ
Reverse recovery time (Trr) 72ns
Operating temperature -40℃~ 175℃@(Tj)
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