IRLU3103 Infineon | Infineon agency

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Mfr. #：

IRLU3103

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through Hole N Channel 30 V 55A (Tc) 107W (Tc) I-PAK

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	55A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (max) at Id, Vgs	19 milliohms @ 33A, 10V
Vgs(th) (max) at Id	1V @ 250μA
Gate Charge?(Qg) (max) at Vgs	50 nC @ 4.5 V
Vgs (max)	±16V
Various Vds Input Capacitance (Ciss) (max)	1600 pF @ 25 V
FET Function	-
Power Dissipation (max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package/Case	TO-251-3 Short Lead, IPak, TO-251AA

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