LOGO
LOGO
IPB80R290C3A Image

img for reference only

Mfr. #:
IPB80R290C3A
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
844
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain-Source Voltage (Vdss) 800V
Continuous Drain Current (Id) 17A
Power (Pd) 227W
On-Resistance (RDS(on)@Vgs,Id) 290mΩ@11A,10V
Threshold Voltage (Vgs(th)@Id) 3.9V@1mA
Gate Charge (Qg@Vgs) 117nC@10V
Input Capacitance (Ciss@Vds) 2.3nF@100V
Operating Temperature -40℃~ 150℃@(Tj)
Related models
  • IPZ65R045C7XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO247-4

  • IPZ65R065C7XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO247-4

  • IPZ65R095C7XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 24A; 128W; PG-TO247-4

  • IRF6645TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET

  • IRF6646TRPBF

    Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET

  • IRF6648TRPBF

    Transistor: N-MOSFET; unipolar; 60V; 86A; 89W; DirectFET

  • IRF6655TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET

  • IRF6665TRPBF

    Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd