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IPB110N20N3LFATMA1 Image

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Mfr. #:
IPB110N20N3LFATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
97
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 200V
Continuous Drain Current (Id) 88A
Power (Pd) 250W
On-resistance (RDS(on)@Vgs,Id) 11mΩ@88A,10V
Threshold Voltage (Vgs(th)@Id) 4.2V@260uA
Gate Charge (Qg@Vgs) 76nC@10V
Input Capacitance (Ciss@Vds) 650pF@100V
Operating Temperature -55℃~ 150℃@(Tj)
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