BUZ31 H3045A Infineon | Infineon agency

img for reference only

Mfr. #：

BUZ31 H3045A

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 200 V 14.5A (Tc) 95W (Tc) PG-TO263-3

Datasheet:

In Stock:

1004

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	SIPMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	14.5A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	200 mOhm @ 9A, 10V
Vgs(th) (max) at Id	4V @ 1mA
Vgs (max)	±20V
Input Capacitance (Ciss) (max) at Vds	1120 pF @ 25 V
FET Function	-
Power dissipation (max)	95W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO263-3
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB

IPD80P03P4L07ATMA2

Infineon P-channel MOS tube, Vds=30 V, 80 A, PG-TO252-3-11, SMD installation, IPD80P03P4L07ATMA2
IPA80R1K0CEXKSA2

Infineon MOS tube, Vds=800 V, 5.7 A, PG-TO 220 FullPAK, SMD installation, IPA80R1K0CEXKSA2
BSZ037N06LS5ATMA1

Infineon N-channel MOS tube, Vds=60 V, 104 A, TSDSON, SMD installation
BSC014N06NSATMA1

Infineon N-channel MOS tube, Vds=60 V, 100 A, PG-TDSON-8-17, SMD installation
IRF7820TRPBF

Infineon N-channel MOS tube, Vds=200 V, 3.7 A, SO-8, through-hole mounting, IRF7820TRPBF
BSZ42DN25NS3GATMA1

Infineon N-channel MOS tube, Vds=250 V, 5 A, PG-TSDSON-8-2, SMD installation
BSC070N10NS5SCATMA1

Infineon N-channel MOS tube, Vds=100 V, 82 A, PG-WSON, SMD installation
IPB029N06NF2SATMA1

Infineon N-channel enhancement mode MOS tube, Vds=60 V, 120 A, PG-TO263-3, SMD mount, 3 pins, IPB029N06NF2SATMA1