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IMBG120R090M1HXTMA1 Image

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Mfr. #:
IMBG120R090M1HXTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
2
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Silicon Carbide Field Effect Transistor (MOSFET)
Channel Type 1 N-channel
Vds-Drain-Source Breakdown Voltage 1200V
Id-Drain Current (25℃) 26A
Pd-Power Consumption 136W
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