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IPW65R110CFDFKSA2 Image

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Mfr. #:
IPW65R110CFDFKSA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 650 V 31.2A (Tc) 277.8W (Tc) PG-TO247-3-41
Datasheet:
In Stock:
208
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CFD2
Package Dip
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 31.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 110 mOhm @ 12.7A, 10V
Vgs(th) (max) at Id 4.5V @ 1.3mA
Gate Charge?(Qg) (max) at Vgs 118 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 3240 pF @ 100 V
FET function -
Power dissipation (max) 277.8W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3-41
Package/case TO-247-3
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