IPW60R075CPAFKSA1 Infineon | Infineon agency

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Mfr. #：

IPW60R075CPAFKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 600 V 39A (Tc) 313W (Tc) PG-TO247-3-41

Datasheet:

In Stock:

174

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q101, CoolMOS?
Package	Dip
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	600 V
Current at 25°C - Continuous Drain (Id)	39A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	75 mOhm @ 26A, 10V
Vgs(th) (max) at Id	3.5V @ 1.74mA
Gate Charge?(Qg) (max) at Vgs	116 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	4000 pF @ 100 V
FET function	-
Power dissipation (max)	313W (Tc)
Operating temperature	-40°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO247-3-41
Package/case	TO-247-3

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