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IPP04CN10NGXKSA1 Image

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Mfr. #:
IPP04CN10NGXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 100A (Tc) 300W (Tc) PG-TO220-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 2
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 4.2 mOhm @ 100A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 210 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 13800 pF @ 50 V
FET Function -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package/Case TO-220-3
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