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IPTG039N15NM5ATMA1 Image

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Mfr. #:
IPTG039N15NM5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 150 V 21A (Ta), 190A (Tc) 3.8W (Ta), 319W (Tc) PG-HSOG-8
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 21A (Ta), 190A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 8V, 10V
On-Resistance (max) at Id, Vgs 3.9 milliohms @ 50A, 10V
Vgs(th) (max) at Id 4.6V @ 243μA
Gate Charge? (Qg) (max) at Vgs 93 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 7300 pF @ 75 V
FET function -
Power dissipation (max) 3.8W (Ta), 319W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOG-8
Package/case 8-PowerSFN
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