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IRFSL4127PBF Image

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Mfr. #:
IRFSL4127PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 200 V 72A (Tc) 375W (Tc) TO-262
Datasheet:
In Stock:
1706
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 200 V
Current at 25°C - Continuous Drain (Id) 72A (Tc)
On-Resistance (max) at Id, Vgs 22 mOhm @ 44A, 10V
Vgs(th) (max) at Id 5V @ 250μA
Gate Charge?(Qg) (max) at Vgs 150 nC @ 10 V
Input Capacitance (Ciss) (max) at Vds 5380 pF @ 50 V
FET Function -
Power dissipation (max) 375W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-262
Package/case TO-262-3, long lead, I2Pak, TO-262AA
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