BSZ0910NDXTMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

BSZ0910NDXTMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET - Array 2 N-Channel (Dual) 30V 9.5A (Ta), 25A (Tc) 1.9W (Ta), 31W (Tc) Surface Mount PG-WISON-8

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	2 N-Channel (Dual)
FET Function	Logic Level Gate, 4.5V Drive
Drain Source Voltage (Vdss)	30V
Current at 25°C - Continuous Drain (Id)	9.5A (Ta), 25A (Tc)
On-Resistance (max) at Id, Vgs	9.5 milliohms @ 9A, 10V
Vgs(th) (max) at Id	2V @ 250μA
Gate Charge?(Qg) (max) at Vgs	5.6nC @ 4.5V
Input Capacitance (Ciss) (max) at Vds	800pF @ 15V
Power - Max	1.9W (Ta), 31W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package/Case	8-PowerVDFN
Supplier Device Package	PG-WISON-8

BFP540ESDH6327XTSA1

Transistor Bipolar-RF, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, SOT-343
BFP840FESDH6327XTSA1

Transistor Bipolar-RF, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, TSFP
BFP740FH6327XTSA1

Transistor Bipolar-RF, NPN, 4 V, 45 GHz, 160 mW, 45 mA, TSFP
BFP460H6327XTSA1

Transistor Bipolar-RF, NPN, 4.5 V, 22 GHz, 230 mW, 70 mA, SOT-343
BFP650FH6327XTSA1

Transistor Bipolar-RF, NPN, 4 V, 42 GHz, 500 mW, 150 mA, TSFP
BFP540FESDH6327XTSA1

Transistor Bipolar-RF, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, TSFP
BFP183E7764HTSA1

Transistor Bipolar-RF, NPN, 12 V, 8 GHz, 250 mW, 65 mA, SOT-143
BFP840FESDH6327XTSA1

Transistor Bipolar-RF, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, TSFP