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IPTG025N10NM5ATMA1 Image

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Mfr. #:
IPTG025N10NM5ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 27A (Ta), 206A (Tc) 3.8W (Ta), 214W (Tc) PG-HSOG-8-1
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 27A (Ta), 206A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 2.5 milliohms @ 150A 10V
Vgs(th) (max) at Id 3.8V @ 158μA
Gate Charge?(Qg) (max) at Vgs 120 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 8800 pF @ 50 V
FET function -
Power dissipation (max) 3.8W (Ta), 214W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOG-8-1
Package/case 8-PowerSFN
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