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IPT022N10NF2SATMA1 Image

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Mfr. #:
IPT022N10NF2SATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 3.8W (Ta), 250W (Tc) PG-HSOF-8
Datasheet:
In Stock:
1800
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series StrongIRFET? 2
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 29A (Ta), 236A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 2.25mOhm @ 150A, 10V
Vgs(th) (max) at Id 3.8V @ 169μA
Gate Charge?(Qg) (max) at Vgs 155 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 7300 pF @ 50 V
FET function -
Power dissipation (max) 3.8W (Ta), 250W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-HSOF-8
Package/case 8-PowerSFN
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