LOGO
LOGO
IPB100N04S204ATMA4 Image

img for reference only

Mfr. #:
IPB100N04S204ATMA4
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 40 V 100A (Tc) 300W (Tc) PG-TO263-3-2
Datasheet:
In Stock:
990
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 100 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 3.3 mOhm @ 80 A, 10 V
Vgs(th) (max) at Id 4 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 172 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 5300 pF @ 25 V
FET Function -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
Related models
  • CY14E256Q5A-SXQ

    IC: SRAM memory; 256kbSRAM; 32kx8bit; SOIC8; -40÷105°C; Serial; 4.5÷5.5VDC

  • CY14MB064Q2A-SXQ

    IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; Serial; 2.7÷3.6VDC

  • CY14MB064Q2A-SXQT

    IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; Serial; 2.7÷3.6VDC

  • CY14ME064J2-SXQT

    IC: SRAM memory; 64kbSRAM; 8kx8bit; SOIC8; -40÷105°C; Serial; 4.5÷5.5VDC

  • CY14V101LA-BA25XIT

    IC: SRAM memory; 1MbSRAM; 128kx8bit; 25ns; FBGA48; parallel; -40÷85°C

  • CY14V101NA-BA25XI

    IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel; -40÷85°C

  • CY14V101NA-BA25XIT

    IC: SRAM memory; 1MbSRAM; 64kx16bit; 25ns; FBGA48; parallel; -40÷85°C

  • CY14V101QS-BK108XI

    IC: SRAM memory; 1MbSRAM; 128kx8bit; FBGA24; -40÷85°C; Serial; 108MHz

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd