LOGO
LOGO
BC857SE6327 Image

img for reference only

Mfr. #:
BC857SE6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog BJT
Transistor Type PNP
Collector Current(Ic) 100mA
Collector-Emitter Breakdown Voltage(Vceo) 45V
Power(Pd) 250mW
DC Current Gain(hFE@Ic,Vce) 200@2mA,5V
Characteristic Frequency(fT) 250MHz
Collector Cutoff Current(Icbo) 15nA
Collector-Emitter Saturation Voltage(VCE(sat)@Ic,Ib) 650mV@100mA,5mA
Operating Temperature -
Related models
  • BAR5002VH6327XTSA1

    Diode, RF/PIN, Single, 4.5 ohm, 50 V, SC-79, 2-pin, 0.4 pF

  • BAS5202VH6433XTMA1

    Small Signal Schottky Diode, Single, 45 V, 500 mA, 600 mV, 2 A, 150 °C

  • BBY5702VH6327XTSA1

    Variable Capacitance Diode, Varactor AEC-Q101, 18.6 pF, 20 mA, 10 V, 125 °C, SC-79, 2-pin

  • BAT60BE6359HTMA1

    Schottky Rectifier, 10 V, 3 A, Single, SOD-323, 2 Pin, 600 mV

  • HFA08TB60PBF

    Fast/Ultrafast Diode, 600 V, 8 A, Single, 1.7 V, 55 ns, 60 A

  • IDH08S120AKSA1

    SiC Schottky Diode, ThinQ 2G 1200V Series, Single, 1.2 kV, 7.5 A, 27 nC, TO-220

  • HFA15PB60PBF

    Fast/Ultrafast Diode, 600 V, 15 A, Single, 1.7 V, 60 ns, 150 A

  • IDP15E60XKSA1

    Standard Recovery Diode, 600 V, 29.2 A, Single, 2 V, 60 A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd