LOGO
LOGO
FP50R12N2T7BPSA2 Image

img for reference only

Mfr. #:
FP50R12N2T7BPSA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog IGBT tube/module
IGBT type FS(field stop)
Collector-emitter breakdown voltage(Vces) 1.2kV
Collector current(Ic) 50A
Power(Pd) 20mW
Gate threshold voltage(Vge(th)@Ic) 1.5V@15V,50A
Input capacitance(Cies@Vce) 11.1nF@25V
Operating temperature -40℃~ 175℃@(Tj)
Related models
  • SMBD7000E6327HTSA1

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • SMBD 7000 E6327

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • MMBD914LT1XT

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.25A

  • MMBD7000LT1XT

    Diodes - General Purpose, Power, Switching AF DIODE 100V 0.2A

  • BAV 70S H6327

    Diodes - General Purpose, Power, Switching AF DIGITAL TRANSISTOR

  • BAS16E6327HTSA1

    Diodes - General Purpose, Power, Switching AF DIODE 85V 0.25A

  • BAW101E6327HTSA1

    Diode - General Purpose, Power, Switching 300 V 250 mA

  • BAV70E6327HTSA1

    Diodes - General Purpose, Power, Switching AF DIODE 85V 0.2A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd