LOGO
LOGO
AUIRF7341Q Image

img for reference only

Mfr. #:
AUIRF7341Q
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET - Array 2 N-Channel (Dual) 55V 5.1A 2.4W Surface Mount 8-SOIC
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type 2 N-Channel (Dual)
FET Function Logic Level Gate
Drain Source Voltage (Vdss) 55V
Current at 25°C - Continuous Drain (Id) 5.1A
On Resistance (max) at Id, Vgs 50 milliohms @ 5.1A, 10V
Vgs(th) (max) at Id 3V @ 250μA
Gate Charge?(Qg) (max) at Vgs 44nC @ 10V
Input Capacitance (Ciss) (max) at Vds 780pF @ 25V
Power - Maximum 2.4W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package/Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Related models
  • BCX56H6327XTSA1

    Transistor - Bipolar (BJT) - Single NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT89

  • BCX5116H6327XTSA1

    Transistor - Bipolar (BJT) - Single PNP 45 V 1 A 125MHz 2 W Surface Mount PG-SOT89

  • BCX5610H6327XTSA1

    Transistor - Bipolar (BJT) - Single NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT89

  • BC817SUE6327HTSA1

    Transistor - Bipolar (BJT) - Single NPN 45 V 500 mA 170MHz 1 W Surface Mount PG-SC74-6

  • BCP5216H6327XTSA1

    Transistor - Bipolar (BJT) - Single PNP 60 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10

  • BCP5310H6327XTSA1

    Transistor - Bipolar (BJT) - Single PNP 80 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10

  • BCP5316H6327XTSA1

    Transistor - Bipolar (BJT) - Single PNP 80 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-24

  • BCP5316H6433XTMA1

    Transistor - Bipolar (BJT) - Single PNP 80 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd