IPB043N10NF2SATMA1 Infineon | Infineon agency

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Mfr. #：

IPB043N10NF2SATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 100 V 3.8W (Ta), 167W (Tc) PG-TO263-3

Datasheet:

In Stock:

581

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	StrongIRFET? 2
Packaging	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	21A (Ta), 135A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	4.35mOhm @ 80A, 10V
Vgs(th) (max) at Id	3.8V @ 93μA
Gate Charge?(Qg) (max) at Vgs	85 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	4000 pF @ 50 V
FET function	-
Power dissipation (max)	3.8W (Ta), 167W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO263-3
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB

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