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IPB042N10N3GE8187ATMA1 Image

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Mfr. #:
IPB042N10N3GE8187ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 100A (Tc) 214W (Tc) PG-TO263-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 100A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (max) at Id, Vgs 4.2 mOhm @ 50A, 10V
Vgs(th) (max) at Id 3.5V @ 150μA
Gate Charge?(Qg) (max) at Vgs 117 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 8410 pF @ 50 V
FET function -
Power dissipation (max) 214W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-3
Package/case TO-263-3, D2Pak (2-lead tab), TO-263AB
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