IPD055N08NF2SATMA1 Infineon | Infineon agency

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Mfr. #：

IPD055N08NF2SATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 80 V 17A (Ta), 98A (Tc) 3W (Ta), 107W (Tc) PG-TO252-3

Datasheet:

In Stock:

1815

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	StrongIRFET? 2
Package	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	80 V
Current at 25°C - Continuous Drain (Id)	17A (Ta), 98A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6V, 10V
On-Resistance (max) at Id, Vgs	5.5 milliohms @ 60A, 10V
Vgs(th) (max) at Id	3.8V @ 55μA
Gate Charge?(Qg) (max) at Vgs	54 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max) at different Vds	2500 pF @ 40 V
FET function	-
Power dissipation (max)	3W (Ta), 107W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-TO252-3
Package/case	TO-252-3, DPak (2-lead tab), SC-63

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