LOGO
LOGO
IMW65R015M2HXKSA1 Image

img for reference only

Mfr. #:
IMW65R015M2HXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET SILICON CARBIDE MOSFET Information about Infineon Technologies infineon coolsic 650v g2 mosfets
Datasheet:
In Stock:
451
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Technology SiC
Mounting Style Through Hole
Package/Case TO-247-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds-Drain-Source Breakdown Voltage 650 V
Id-Continuous Drain Current 93 A
Rds On-Drain-Source On-Resistance 18 mOhms
Vgs - Gate-Source Voltage - 7 V, 23 V
Vgs th-Gate-Source Threshold Voltage 5.6 V
Qg-Gate Charge 79 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature 175 C
Pd-Power Dissipation 341 W
Channel Mode Enhancement
Qualification
Trade Name CoolSiC
Package Tube
Related models
  • BAR5002VH6327XTSA1

    Diode, RF/PIN, Single, 4.5 ohm, 50 V, SC-79, 2-pin, 0.4 pF

  • BAS5202VH6433XTMA1

    Small Signal Schottky Diode, Single, 45 V, 500 mA, 600 mV, 2 A, 150 °C

  • BBY5702VH6327XTSA1

    Variable Capacitance Diode, Varactor AEC-Q101, 18.6 pF, 20 mA, 10 V, 125 °C, SC-79, 2-pin

  • BAT60BE6359HTMA1

    Schottky Rectifier, 10 V, 3 A, Single, SOD-323, 2 Pin, 600 mV

  • HFA08TB60PBF

    Fast/Ultrafast Diode, 600 V, 8 A, Single, 1.7 V, 55 ns, 60 A

  • IDH08S120AKSA1

    SiC Schottky Diode, ThinQ 2G 1200V Series, Single, 1.2 kV, 7.5 A, 27 nC, TO-220

  • HFA15PB60PBF

    Fast/Ultrafast Diode, 600 V, 15 A, Single, 1.7 V, 60 ns, 150 A

  • IDP15E60XKSA1

    Standard Recovery Diode, 600 V, 29.2 A, Single, 2 V, 60 A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd