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IPA600N25NM3SXKSA1 Image

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Mfr. #:
IPA600N25NM3SXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 250 V 15A (Tc) 38W (Tc) PG-TO220 whole package
Datasheet:
In Stock:
294
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?3
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 250 V
Current at 25°C - Continuous Drain (Id) 15 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 60 mOhm @ 15 A, 10 V
Vgs(th) (max) at Id 4 V @ 89 μA
Gate Charge?(Qg) (max) at Vgs 29 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 2300 pF @ 100 V
FET Function -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Package
Package/Case TO-220-3 Full Package
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