IRF2804LPBF Infineon | Infineon agency

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Mfr. #：

IRF2804LPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through Hole N Channel 40 V 75A (Tc) 300W (Tc) TO-262

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	75 A (Tc)
On-Resistance (max) at Id, Vgs	2.3 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id	4 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs	240 nC @ 10 V
Input Capacitance (Ciss) (max) at Vds	6450 pF @ 25 V
FET Function	-
Power dissipation (max)	300W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	TO-262
Package/case	TO-262-3, long lead, I2Pak, TO-262AA

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