IPB026N10NF2SATMA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IPB026N10NF2SATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

MOSFET TRENCH >=100V

Datasheet:

In Stock:

784

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Technology
Mounting Style	SMD/SMT
Package/Case	D2PAK-3 (TO-263-3)
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds-Drain-Source Breakdown Voltage	100 V
Id-Continuous Drain Current	162 A
Rds On-Drain-Source On-Resistance	2.65 mOhms
Vgs - Gate-Source Voltage	- 20 V, 20 V
Vgs th-Gate-Source Threshold Voltage	2.2 V
Qg-Gate Charge	103 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	175 C
Pd-Power Dissipation	250 W
Channel Mode	Enhancement
Qualification
Trade Name
Packaging	Reel, Cut Tape

BCR 166L3 E6327

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 250 mW Surface Mount PG-TSLP-3-4
BCR 166T E6327

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 250 mW Surface Mount PG-SC-75
BCR166WE6327HTSA1

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 160 MHz 250 mW Surface Mount PG-SOT323
BCR 169F E6327

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-TSFP-3
IKW75N65EL5XKSA1

IGBT 650 V 80 A 536 W Through hole PG-TO247-3
AUIRG4PH50S

IGBT 1200 V 141 A 543 W Through Hole TO-247AC
AIKW50N65DF5XKSA1

IGBT Trench 650 V 270 W Through Hole PG-TO247-3-41
CY23EP09ZXC-1HT

Fanout Buffer (Distribution), Zero Delay Buffer IC 200MHz, 220MHz 1 16-TSSOP (0.173", 4.40mm Width)