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AUIRF7343Q Image

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Mfr. #:
AUIRF7343Q
Mfr.:
Infineon Technologies
Batch:
23+
Description:
MOSFET - Array N & P Channel 55V 4.7A, 3.4A 2W Surface Mount 8-SOIC
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series HEXFET?
Package Tube
FET Type N and P channel
FET Function Logic level gate
Drain-source voltage (Vdss) 55V
Current at 25°C - Continuous Drain (Id) 4.7A, 3.4A
On-resistance (max) at different Id, Vgs 50 milliohms @ 4.7A, 10V
Vgs(th) (max) at different Id 1V @ 250μA
Gate charge?(Qg) (max) at different Vgs 36nC @ 10V
Input capacitance (Ciss) (max) at different Vds 740pF @ 25V
Power - Maximum 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
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