LOGO
LOGO
IQE013N04LM6CGSCATMA1 Image

img for reference only

Mfr. #:
IQE013N04LM6CGSCATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 40 V 31A (Ta), 205A (Tc) 2.5W (Ta), 107W (Tc)
Datasheet:
In Stock:
3165
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 6
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 31A (Ta), 205A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 1.35 milliohms @ 20A, 10V
Vgs(th) (max) at Id 2V @ 51μA
Gate Charge?(Qg) (max) at Vgs 41 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) at different Vds 3800 pF @ 20 V
FET function -
Power dissipation (max) 2.5W (Ta), 107W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-WHTFN-9-1
Package/case 9-PowerWDFN
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd