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IPB65R310CFDATMA2 Image

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Mfr. #：
IPB65R310CFDATMA2
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 650 V 11.4A (Tc) 104.2W (Tc) PG-TO263-3
Datasheet:
Datasheet
In Stock:
999
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS? CFD2
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 650 V
Current at 25°C - Continuous Drain (Id) 11.4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 310 mOhm @ 4.4A, 10V
Vgs(th) (max) at Id 4.5V @ 400μA
Gate Charge?(Qg) (max) at Vgs 41 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1100 pF @ 100 V
FET function -
Power dissipation (max) 104.2W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO263-3
Package/case TO-263-3, D2Pak (2-lead tab), TO-263AB
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