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IQE006NE2LM5CGSCATMA1 Image

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Mfr. #:
IQE006NE2LM5CGSCATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 25 V 2.1W (Ta), 89W (Tc)
Datasheet:
In Stock:
4598
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS? 5
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 47A (Ta), 310A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 580μOhm @ 20A, 10V
Vgs(th) (max) at Id 2V @ 250μA
Gate Charge?(Qg) (max) at Vgs 82 nC @ 10 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 5453 pF @ 12 V
FET function -
Power dissipation (max) 2.1W (Ta), 89W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-WHTFN-9-1
Package/case 9-PowerWDFN
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