IPB80N06S2L09ATMA2 Infineon | Infineon agency

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Mfr. #：

IPB80N06S2L09ATMA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 55 V 80A (Tc) 190W (Tc) PG-TO263-3-2

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	55 V
Current at 25°C - Continuous Drain (Id)	80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5 V, 10 V
On-Resistance (max) at Id, Vgs	8.2 mOhm @ 52 A, 10 V
Vgs(th) (max) at Id	2 V @ 125 μA
Gate Charge?(Qg) (max) at Vgs	105 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	2620 pF @ 25 V
FET Function	-
Power Dissipation (max)	190W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package/Case	TO-263-3, D2Pak (2-Lead Tab), TO-263AB

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