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IPDD60R102G7XTMA1 Image

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Mfr. #:
IPDD60R102G7XTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain-Source Voltage (Vdss) 600V
Continuous Drain Current (Id) 23A
Power (Pd) 139W
On-resistance (RDS(on)@Vgs,Id) 102mΩ@7.8A,10V
Threshold Voltage (Vgs(th)@Id) 4V@390uA
Gate Charge (Qg@Vgs) 34nC@10V
Input Capacitance (Ciss@Vds) 1.32nF@400V
Operating Temperature -55℃~ 150℃@(Tj)
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