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IPDQ60R010S7AXTMA1 Image

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Mfr. #:
IPDQ60R010S7AXTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 600V
Continuous Drain Current (Id) 50A
Power (Pd) 694W
On-resistance (RDS(on)@Vgs,Id) 10mΩ@50A,12V
Threshold Voltage (Vgs(th)@Id) 4.5V@3.08mA
Gate Charge (Qg@Vgs) 318nC@12V
Input Capacitance (Ciss@Vds) 11.987nF@300V
Operating Temperature -40℃~ 150℃@(Tj)
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