LOGO
LOGO
IPD180N10N3GATMA1 Image

img for reference only

Mfr. #:
IPD180N10N3GATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
2405
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 N-channel
Drain Source Voltage (Vdss) 100V
Continuous Drain Current (Id) 43A
Power (Pd) 71W
On-resistance (RDS(on)@Vgs,Id) 18mΩ@33A,10V
Threshold Voltage (Vgs(th)@Id) 3.5V@33uA
Gate Charge (Qg@Vgs) 25nC@10V
Input Capacitance (Ciss@Vds) 1.8nF@50V
Operating Temperature -55℃~ 175℃@(Tj)
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd