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IPB110P06LMATMA1 Image

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Mfr. #:
IPB110P06LMATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Datasheet:
In Stock:
284
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Product Catalog Field Effect Transistor (MOSFET)
Type 1 P-channel
Drain Source Voltage (Vdss) 60V
Continuous Drain Current (Id) 100A
Power (Pd) 300W
On-resistance (RDS(on)@Vgs,Id) 11mΩ@100A,10V
Threshold Voltage (Vgs(th)@Id) 2V@5.55mA
Gate Charge (Qg@Vgs) 281nC@10V
Input Capacitance (Ciss@Vds) 8.5nF@30V
Operating Temperature -55℃~ 175℃@(Tj)
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